View 2SC2981_1844655.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon npn power transistors 2SC2981 description with to-3 package high voltatge high speed applications for high voltatge ,high speed and power switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2981 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = 7 800 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =2.5a; i b =0.5a 1.0 v v be (sat) base-emitter saturation voltage i c =2.5a; i b =0.5a 1.5 v i cbo collector cut-off current v cb =750v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =0.8a ; v ce =5v 15 h fe-2 dc current gain i c =4a ; v ce =5v 10
savantic semiconductor product specification 3 silicon npn power transistors 2SC2981 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

▲Up To Search▲

Price & Availability of 2SC2981

	To Download 2SC2981 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .